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ZXMP6A16K
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V (BR)DSS
-60
V
I D = -250 A, V GS =0V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
I DSS
I GSS
V GS(th)
R DS(on)
-1.0
-1.0
100
0.085
A
nA
V
V DS = -60V, V GS =0V
V GS =±20V, V DS =0V
I D = -250 A, V DS =VGS
V GS = -10V, I D = -2.9A
resistance (*)
0.125
V GS = -4.5V, I D = -2.4A
Forward transconductance (*) (?)
g fs
7.2
S
V DS = -15V, I D = -2.9A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1021
83
56
pF
pF
pF
V DS = -30V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
3.5
4.1
35
10
12.1
ns
ns
ns
ns
nC
V DD = -30V, I D = -1A
R G ? 6.0 , V GS = -10V
V DS = -30V, V GS = -5V
I D = -2.9A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
24.2
2.5
3.7
nC
nC
nC
V DS = -30V, V GS = -10V
I D = -2.9A
Source-drain diode
Diode forward voltage (*)
V SD
-0.85
-0.95
V
T j =25°C, I S = -3.4A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
29.2
39.6
ns
nC
T j =25°C, I S = -2A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 3 - June 2007
? Zetex Semiconductors plc 2007
4
www.zetex.com
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